Search results for "MULTIPLE EXCITON GENERATION"
showing 8 items of 8 documents
Low-temperature exciton absorption in InSe under pressure.
1992
We have investigated the effect of pressure on the lowest direct band-edge exciton of the layered semiconductor InSe by optical-absorption measurements at 10 K and for pressures up to 4 GPa. The Elliott-Toyozawa formalism is used to analyze the line shape of the exciton absorption spectra. In this way we determine the pressure dependence of the lowest direct band gap, the exciton binding energy, and the exciton linewidth. The band gap exhibits a pronounced nonlinear shift with pressure, which is a consequence of the strong anisotropy of intralayer and interlayer bonding. The exciton binding energy decreases with pressure, mainly due to the large increase of the low-frequency dielectric cons…
Review on up/down conversion materials for solar cell application
2012
The present paper reviews the methods of photon up- and down conversion strategies for improving the efficiency of solar cells. Photons with a lower energy than the band gap will be lost in a normal solar cell. The principle of the up conversion technique is that two or more photons are converted into a photon with energy higher than the band gap energy. High energy photons will lose the energy above the band gap energy limit. Down conversion is a process where a high energy photon is converted into several lower energy photons with energies above the band gap. A description is given of the most common methods and materials for these conversions resulting in higher solar cell efficiencies.
THE LIMITING EFFICIENCY OF FOUR-BAND CELLS REVISITED
2014
The limiting theoretical efficiency of four-band solar cells is revisited. In previous work, researchers have looked at the theoretical efficiency of four band cells where the smallest of the three sub-band gaps is closest to the valence band and the largest closest to the conduction band. In this work, limits are calculated also for other possible band configurations. In multi-band cells, photon selectivity can be assured by adjusting the band widths. The present work shows that previous authors have put too rigid constraints on the band structure to achieve spectral selectivity. Relieving these constraints gives a considerably higher limiting efficiency for cells with band width restricti…
The ultrafast dynamics and conductivity of photoexcited graphene at different Fermi energies
2017
The ultrafast dynamics and conductivity of photoexcited graphene can be explained using solely electronic effects.
Dynamics of exciton creation and decay processes in composition – disordered InGaN thin films
2011
In the GaN-based ternary alloys, InGaN crystals have been recognized as key materials for e-h plasmas-exciton dynamics, because of large exciton binding energies (24.8 meV in GaN). We report investigations of creating and recombination dynamics of excitons in commercially important InxGa1-xN composition range from x = 0.1 to 0.18 in which nanoscale indium composition fluctuation occurs and formation of indium rich clusters acting as quantum dots (QD) can be expected. Three MOCVD grown samples having x = 0.1; 0.14 and 0.18 have been investigated using 3D picosecond transient PL spectroscopy. It has been found that the band to band photo excitation at 15 K in whole composition range results i…
Challenges with balancing excitations in intermediate-band solar cells
2015
New insight into the potential of practical solar cells can be given through alternative modeling approaches like Monte Carlo simulations. In the present work, the performance of intermediate band solar cells was examined by this method. It is demonstrated that the balance of excitations from the valence band to the intermediate band and from the intermediate band to the conduction band is of great importance for the performance of such cells. Several cases with different distributions of photons given by ASTM standards have been employed in order to detect spectrum sensitivity. Incident photons are accounted for as they interact with the electrons in the valence band or in the intermediate…
Analytic $JV$ -Characteristics of Ideal Intermediate Band Solar Cells and Solar Cells With Up and Downconverters
2017
The ideal diode equation is regularly used to describe the $\textit {JV}$ -characteristic of single junction solar cells. The connection between the diode equation and fundamental physics is the application of the Boltzmann approximation to describe the fluxes of photons emitted by the cell. In this paper, this approximation is used to derive analytic $\textit {JV}$ -characteristics for three photovoltaic high-efficiency concepts, intermediate band solar cells, and solar cells optically coupled to up and downconverters. These three concepts share the common feature that they allow excitation of electrons between at least three energy levels, which assures a better utilization of the solar s…
Light absorption in silicon quantum dots embedded in silica
2009
The photon absorption in Si quantum dots (QDs) embedded in SiO2 has been systematically investigated by varying several parameters of the QD synthesis. Plasma-enhanced chemical vapor deposition (PECVD) or magnetron cosputtering (MS) have been used to deposit, upon quartz substrates, single layer, or multilayer structures of Si-rich- SiO2 (SRO) with different Si content (43-46 at. %). SRO samples have been annealed for 1 h in the 450-1250 °C range and characterized by optical absorption measurements, photoluminescence analysis, Rutherford backscattering spectrometry and x-ray Photoelectron Spectroscopy. After annealing up to 900 °C SRO films grown by MS show a higher absorption coefficient a…